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hexfet power mosfet notes through are on page 9 features and benefits applications ? battery protection switch pqfn 5x6 mm v ds 20 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 3.0 (@v gs = 2.5v) 4.0 q g typ 44 nc i d (@t c(bottom) = 25c) 80 a m absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 3.6 0.029 52 max. 28 67 400 12 20 22 105 80 v w a c features benefits low thermal resistance to pcb (< 2.4c/w) enable better thermal dissipation 100% rg tested increased reliability low profile (<1.2mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability

!"# form quantity irlh6224trpbf pqfn 5mm x 6mm tape and reel 4000 irlh6224tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

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d s g thermal resistance parameter typ. max. units r ??? 2.4 r ??? 34 c/w r ??? 35 r 10 ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 5.0 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 2.3 3.0 ??? 3.2 4.0 v gs (t h ) gate threshold voltage 0.5 0.8 1.1 v v gs (th) gate threshold voltage coefficient ??? -4.2 ??? mv/c i ds s drain-to-source leakage current ??? ??? 1 ??? ??? 150 i gs s gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 150 ??? ??? s q g total gate charge ??? 86 ??? nc q g total gate charge ??? 44 ??? q gs1 pre-vth gate-to-source charge ??? 3.8 ??? q gs2 post-vth gate-to-source charge ??? 4.7 ??? q gd gate-to-drain charge ??? 8.5 ??? q godr gate charge overdrive ??? 27 ??? q sw switch charge (q gs2 + q gd ) ??? 13 ??? q oss output charge ??? 30 ??? nc r g gate resistance ??? 2.0 ??? . 10 100 0 avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 38 57 ns q rr reverse recovery charge ??? 82 125 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 50 a a v gs = 2.5v, i d = 16a v gs = 4.5v v ds = 16v, v gs = 0v, t j = 125c m v ds = 16v, v gs = 0v v gs = 10v, v ds = 15v, i d = 20a typ. ??? r g =1.8 v ds = 10v, i d = 20a i d = 20a i d = 20a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v t j = 25c, i f = 20a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 4.5v, i d = 20a conditions max. 125 20 ? = 1.0mhz ??? ??? 400 ??? ??? 67 mosfet symbol na ns a pf nc v ds = 10v ??? v gs = 12v v gs = -12v
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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.00v 4.50v 2.50v 2.30v 2.00v 1.75v bottom 1.50v 60 s pulse width tj = 25c 1.50v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.00v 4.50v 2.50v 2.30v 2.00v 1.75v bottom 1.50v 60 s pulse width tj = 150c 1.50v 0 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v vds= 4.0v i d = 20a
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse operation in this area limited by r ds (on) limited by package 100 sec 1msec 10msec dc 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package

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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 2 4 6 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.7a 9.3a bottom 20a
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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimens ion des ign to accommodate the component width dimens ion des ign to accommodate the component lenght dimens ion des ign to accommodate the component thicknes s pitch between s ucces s ive cavity centers overall width of the carrier tape des cription type package 5 x 6 pqf n note: all dimens ion are nominal diameter reel qty width reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadr ant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 $ %$ xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)
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qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.63mh, r g = 50 , i as = 20a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 80a by die-source to lead-frame bonding technology ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level indus trial ?? (per je de c je s d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? updated tape and reel on page 8. ? updated data sheet based on corporate template. ? . ? 1 . ? . 01 ? . 101 01

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